Wednesday, September 8, 2010
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Military

 
Medium Waveband
  • Very low levels of defects, typically <0.1%
  • Small pixels and large formats available
  • Capability for higher operating temperatures is a key advantage of InSb technology
  • Higher operating temperatures gives benefits of longer life product and lower cooler power
 
Long Waveband
  • Very low levels of defects, typically <0.2%
  • Small pixels and large formats available
  • High Quantum Efficiency determined by the absorber thickness
  • Advantage over QWIP of shorter stare time, good MTF and better NETD
  • Excellent performance under lower flux applications including multi andhyperspectral imaging
 
Dual Waveband
  • MOVPE mesa process well suited to dual band structures
  • Excellent diode quality and very low levels of defects
  • Dual band demonstrated at 30, 24 and 20um pitch
Short Waveband
  • Avalanche Photodiode Array Detectors
  • Leader with MCT APD technology
  • Currently LPE but moving to MOVPE for larger format arrays
  • Avalanche gain up to x 150 in pixel
  • Dual mode and 3D imaging capabilities
  • Laser Gated imaging arrays
 
 
 
Product Name
Nominal Waveband
Array Format
Pixel Pitch
# of Outputs
PDF
Osprey-C MW
3-5µm
384 x 288
20µm
4
Osprey-C LW
8-10µm
384 x 288
20µm
4
Osprey-S MW
3-5µm
384 x 288
20µm
4
Osprey-S LW
8-10µm
384 x 288
20µm
4
Eagle MW
3-5µm
640 x 512
24µm
4
Eagle LW
8-10µm
640 x 512
24µm
4
Harrier
8-10µm
640 x 512
24µm
8
Hawk MW
3-5µm
640 x 512
16µm
4
Hawk LW
8-10µm
640 x 512
16µm
4
Merlin MW
3-5µm
1024 x 768
16µm
8
Merlin LW
8-10µm
1024 x 768
16µm
8
Swift
1.5µm
320 x 256
24µm
4
Swan
1.5µm & 3-5µm
320 x 256
24µm
4
Swallow
1.5µm
320 x 256
24µm
4
Condor-II
3-5 & 8-10µm
640 x 512
24µm
8
Condor-III
3-5 & 8-10µm
640 x 512
20µm
8
M-20
3-5µm
640 x 512
20µm
8
L-20
8-10µm
640 x 512
20µm
8
 

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